note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: F00049E doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com designer?s data sheet part number / ordering information 1 / sff250 __ __ __ screening 2 / __ = not screen tx = tx level txv = txv level s = s level lead option 3 / __ = straight leads db = down bend ub = up bend package 3 / m = to-254 z = to-254z sff250m sff250z 30 amp / 200 volts 0.060 typical n-channel power mosfet features: ? rugged construction with polysilicon gate cell ? low r ds(on) and high transconductance ? excellent high temperature stability ? very fast switching speed ? fast recovery and superior dv/dt performance ? increased reverse energy capability ? low input and transfer capacitance for easy paralleling ? ceramic seals available for improved hermeticity ? hermetically sealed surface mount power package ? tx, txv, space level screening available ? replacement for irfm250 types maximum ratings symbol value units drain ? source voltage v ds 200 volts gate ? source voltage v gs 20 volts continuous collector current i d 30 amps operating & storage temperature top & tstg -55 to +150 oc maximum thermal resistance junction to case r jc 1 oc/w total device dissipation t c = 25oc t c = 55oc p d 125 95 w to-254 (m) to-254z (z) for pin out configuration and optional lead bend, see page 3.
note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: F00049E doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sff250m sff250z electrical characteristics @ t j = 25 o c (unless otherwise specified) symbol min typ max units drain to source breakdown voltage (vgs= 0 v, id= 250 ? a ? bv dss 200 ?? ?? v drain to source on state resistance (vgs= 10 v, id= 18 a ? r ds(on) ?? 0.06 0.085 ? gate threshold voltage (vds= vgs, id= 250 a ? v gs(th) 2 3 5 v forward transconductance (vds in(on) x rds(on) max, id= 18 a ? g fs 10 17 ?? mho zero gate voltage drain current (vds= 200 v, vgs= 0 v) (vds= 200 v, vgs= 0 v, ta= 125oc) i dss ?? ?? ?? ?? 25 250 a gate to source leakage forward gate to source leakage reverse at rated vgs i gss ?? ?? ?? ?? +100 -100 na total gate charge gate to source charge gate to drain charge vgs=10 v vds= 100 v id= 30 a q g q gs q gd ?? ?? ?? 70 18 35 120 25 65 nc turn on delay time rise time turn on delay time fall time vdd= 100 v id= 15 a rg= 6.2 ? td (on) tr td (off) tf ?? ?? ?? ?? 29 35 75 35 30 180 100 120 nsec diode forward voltage (is= 30 a, vgs= 0 v, tj= 25oc) v sd ?? ?? 1.1 1.5 v diode reverse recovery time reverse recovery charge t j = 25oc if= 10 a di/dt= 100 a/ sec t rr q rr ?? ?? 150 2.0 630 8 nsec c input capacitance input capacitance reverse transfer capacitance vgs= 0 volts vds= 25 volts f= 1 mhz c iss c oss c rss ?? ?? ?? 4200 650 120 ?? ?? ?? pf for thermal derating curves and other characteristics please contact ssdi marketing department. available part numbers: sff250m; sff250mdb; sff250mub; sff250z; sff250zdb; sff250zub; pin assignment (standard) package drain source gate to-254 (m) pin 1 pin 2 pin 3 to-254z (z) pin 1 pin 2 pin 3
note: all specifications are subject to change without notification. scd's for these devices should be reviewed by ssdi prior to release. data sheet #: F00049E doc solid state devices, inc. 14701 firestone blvd * la mirada, ca 90638 phone: (562) 404-4474 * fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com sff250m sff250z case outline: to-254 (m) .685 .665 .750 .500 pin 2 pin 1 pin 3 ? .150 .139 .545 .535 .800 .790 .050 .040 .270 .240 .545 .535 .155 .140 3x ? .045 .035 2x .155 .145 case outline: to-254z (z) pin 1 pin 2 pin 3 suffix: zdb suffix: zub su ffix : m u b suffix: mdb
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